Simulation Study of Gate Leakage Current Under Three-Terminal Operation for AlGaN/GaN HEMTs

On-state gate leakage current behavior of AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using Technology Computer Aided Design (TCAD) simulation. We found the gate leakage current increases above the pinch-off voltage, which is different from the case of a two-terminal operation. This gate leakage current increase is due to self-heating effect at the gate edge of the drain side where the gate leakage occurs. Topical Workshop on Heterostructure Microelectronics (TWHM) This work may not be copied or reproduced in whole or in part for any commercial purpose. Permission to copy in whole or in part without payment of fee is granted for nonprofit educational and research purposes provided that all such whole or partial copies include the following: a notice that such copying is by permission of Mitsubishi Electric Research Laboratories, Inc.; an acknowledgment of the authors and individual contributions to the work; and all applicable portions of the copyright notice. Copying, reproduction, or republishing for any other purpose shall require a license with payment of fee to Mitsubishi Electric Research Laboratories, Inc. All rights reserved. Copyright c ©Mitsubishi Electric Research Laboratories, Inc., 2013 201 Broadway, Cambridge, Massachusetts 02139